Enhanced terahertz emission from impurity compensated GaSb

Ricardo Ascázubi, Carl Shneider, Ingrid Wilke, Robinson Pino, and Partha S. Dutta
Phys. Rev. B 72, 045328 – Published 14 July 2005

Abstract

We report femtosecond optically excited terahertz (THz) emission from tellurium doped GaSb at room temperature. The influence of the majority and minority carrier type and concentrations on the strength of the THz emission is investigated. Strong enhancement of THz emission in GaSb is observed as a result of compensation of native acceptors by tellurium donors. Surface field acceleration and the photo-Dember effect are identified as THz emission mechanisms in GaSb and modeled in dependence of the majority and minority carrier type and concentrations in our GaSb samples. THz emission from p-type GaSb is dominated by the photo-Dember effect whereas THz emission from n-type GaSb is dominated by surface field acceleration. The doping conditions under which THz emission is maximized are identified.

    • Received 11 November 2004

    DOI:https://doi.org/10.1103/PhysRevB.72.045328

    ©2005 American Physical Society

    Authors & Affiliations

    Ricardo Ascázubi1, Carl Shneider1, Ingrid Wilke1, Robinson Pino2, and Partha S. Dutta2

    • 1Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA
    • 2Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA

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    Issue

    Vol. 72, Iss. 4 — 15 July 2005

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