Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots

Alberto Franceschetti and Alex Zunger
Phys. Rev. B 62, 2614 – Published 15 July 2000
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Abstract

The electron and hole addition energies, the quasiparticle gap, and the optical gap of InAs, InP, and Si quantum dots are calculated using microscopic pseudopotential wave functions. The effects of the dielectric mismatch between the quantum dot and the surrounding material are included using a realistic profile for the dielectric constant ε(r). We find that the addition energies and the quasiparticle gap depend strongly on the dielectric constant of the environment εout, while the optical gap is rather insensitive to εout. We compare our results with recent tunneling spectroscopy measurements for InAs nanocrystals, finding excellent agreement. Our calculations for the addition energies and the quasiparticle gap of InP and Si nanocrystals serve as predictions for future experiments.

  • Received 5 November 1999

DOI:https://doi.org/10.1103/PhysRevB.62.2614

©2000 American Physical Society

Authors & Affiliations

Alberto Franceschetti and Alex Zunger

  • National Renewable Energy Laboratory, Golden, Colorado 80401

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Vol. 62, Iss. 4 — 15 July 2000

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