First- and second-order Raman scattering from semi-insulating 4HSiC

J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson
Phys. Rev. B 59, 7282 – Published 15 March 1999
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Abstract

We have measured the first- and second-order Raman spectra from semi-insulating 4HSiC at room temperature under nonresonant excitation. The results are compared with Raman spectra of n-type doped 4H- and 6HSiC. The second-order spectra for both 4H- and 6HSiC contain an acoustic branch and an optical branch, which is clearly dependent on SiC polytype. The measured two-phonon spectra are assigned by comparison with theoretical calculations.

  • Received 11 May 1998

DOI:https://doi.org/10.1103/PhysRevB.59.7282

©1999 American Physical Society

Authors & Affiliations

J. C. Burton, L. Sun, and F. H. Long*

  • Department of Chemistry, Rutgers University, Piscataway, New Jersey 08854-8087

Z. C. Feng

  • Institute of Materials Research & Engineering, S7, NUS, 119260 Singapore

I. T. Ferguson

  • EMCORE Corporation, Somerset, New Jersey 08873

  • *Author to whom correspondence should be addressed. Electronic address: fhlong@rutchem.rutgers.edu

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Vol. 59, Iss. 11 — 15 March 1999

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