Fluorescence-line narrowing in CdSe quantum dots: Surface localization of the photogenerated exciton

M. Nirmal, C. B. Murray, and M. G. Bawendi
Phys. Rev. B 50, 2293 – Published 15 July 1994
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Abstract

The electronic properties of shallow band-edge surface traps in nanometer-size CdSe quantum dots are probed using fluorescence-line-narrowing spectroscopy. We find large changes in electron-hole-pair radiative lifetimes and couplings to LO phonons as the temperature is changed from 1.75 to 10 K. We attribute these changes to the localization of the photogenerated hole at the surface of the dots, accompanied by thermally activated motion between these surface localized states. A simple model based on the observed exciton–LO-phonon couplings is constructed to estimate the extent of hole localization in the luminescing state. A size-dependent study (20–80 Å diameter) indicates that surface effects diminish rapidly with increasing size.

  • Received 27 December 1993

DOI:https://doi.org/10.1103/PhysRevB.50.2293

©1994 American Physical Society

Authors & Affiliations

M. Nirmal, C. B. Murray, and M. G. Bawendi

  • Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139

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Vol. 50, Iss. 4 — 15 July 1994

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