The paper is devoted to calculation of the ‘‘classical’’ (thermal and/or shot) intrinsic noise of the single-electron transistor (SET) caused by the stochastic character of electron tunneling. Exact solution of the master equation describing the dynamics of the SET is obtained in the frequency representation. The low-frequency limit for the spectral calculations is considered in detail.

• Received 21 October 1993

DOI:https://doi.org/10.1103/PhysRevB.49.10381