Abstract
A comprehensive model for the generation of positive charge and fast interface states in metal-oxide-semiconductor structures during electron injection is quantitatively analyzed. According to this model, the injected electrons are accelerated in the conduction band by the external electric field. Once they reach the anode- interface, a significant fraction of them lose their kinetic energy by exciting surface plasma oscillations. The decay of these collective excitations into hot-electron-hole pairs results in the injection of holes into the oxide and their trapping at the Si- interface. The theoretical predictions agree with the experimental dependence of the phenomenon on anode field, temperature, gate material, and oxide thickness.
- Received 1 November 1984
DOI:https://doi.org/10.1103/PhysRevB.31.2099
©1985 American Physical Society