Thermodynamics of excitonic molecules in silicon

P. L. Gourley and J. P. Wolfe
Phys. Rev. B 20, 3319 – Published 15 October 1979
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Abstract

The first spatially controlled thermodynamic measurements of a system of free excitons (FE) and excitonic molecules (EM) are reported. Both excitonic phases are confined to Gaussian spatial distributions in a strain-induced potential well. This parabolic well affords a simple analytic description of the thermal expansion of the gases. Recombination emission from the ultrapure Si is detected with spatial, spectral, and time resolution over the temperature range 3.5-10 K. The system is well described by a chemical equilibrium between two ideal gases at the lattice temperature: we observe the quadratic dependence of the EM density on the FE density and the expected form of thermal activation. In addition, the EM-FE thermalization time is found to be much less than the recombination times. The thermodynamically determined binding energy, φEMt=1.53±0.10 meV, is in excellent agreement with our measured spectroscopic value φEMs=1.46±0.09 meV. These values are several times larger than the most recent theoretical estimates.

  • Received 30 November 1978

DOI:https://doi.org/10.1103/PhysRevB.20.3319

©1979 American Physical Society

Authors & Affiliations

P. L. Gourley and J. P. Wolfe

  • Physics Department and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

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Issue

Vol. 20, Iss. 8 — 15 October 1979

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