The most general form of the Hamiltonian of an electron or hole in a semiconductor such as Si or Ge, in the presence of an external homogeneous magnetic field, is given. Two methods of obtaining the corresponding energy levels are discussed. The first should yield very accurate values for the magnetic field in the (111) direction for either Si or Ge. The second is a perturbation method and is expected to give good results only for Ge.

• Received 17 November 1955

DOI:https://doi.org/10.1103/PhysRev.102.1030