Effect of gate bias sweep rate on the threshold voltage of in-plane gate nanowire transistor

In₂O₃ nanowire electric-double-layer (EDL) transistors with in-plane gate gated by SiO₂ solid-electrolyte are fabricated on transparent glass substrates. The gate voltage sweep rates can effectively modulate the threshold voltage (V_th) of nanowire device. Both depletion mode and enhancement mode are realized, and the V_th shift of the nanowire transistors is estimated to be 0.73V (without light). This phenomenon is due to increased adsorption of oxygen on the nanowire surface by the slower gate voltage sweep rates. Adsorbed oxygens capture electrons and cause a surface of nanowire channel was depleted. The operation voltage of transistor was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance. These transparent in-plane gate nanowire transistors are promising for "see-through" nanoscale sensors.