Abstract
Charge carrier mobility is an important primary parameter for the electronic conductive materials, and the intrinsic limit of the mobility has been hardly access by conventional direct-current evaluation methods. In the present study, intra-grain hole mobility of pentacene thin films was estimated quantitatively using microwave-based dielectric loss spectroscopy (time-resolved microwave conductivity measurement) in alternating current mode of charge carrier local motion. Metal-insulator-semiconductor devices were prepared with different insulating polymers or substrate temperature upon vacuum deposition of the pentacene layer, which afforded totally four different grain-size conditions of pentacene layers. Under the condition where the local motion was determined by interfacial traps at the pentacene grain boundaries (grain-grain interfaces), the observed hole mobilities were plotted against the grain sizes, giving an excellent correlation fit successfully by a parabolic function representative of the boarder length. Consequently, the intra-grain mobility and trap-release time of holes were estimated as 15 cm2 V−1 s−1 and 9.4 ps.
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