Abstract
The influence of different types of covering on electron field emission from silicon tips has been studied. For this a series of silicon tip array structures, namely (i) structures with porous silicon layers on the tops of the tips, (ii) tips covered with carbon films, (iii) silicon tips implanted by hydrogen, and (iv) cesium-enriched silicon tips, has been prepared and investigated. The comparison and characterization of various structures using effective work functions, field enhancement factors, and effective emission areas obtained from Fowler - Nordheim plots have been performed. Models and mechanisms of enhancement of the electron field emission have been proposed.
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