The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices

The diode performance of Au/n-Si and Au/n-GaAs systems has been investigated within the temperature range of 100 K to 300 K. From the results of photovoltage and I-V measurements, the calculated solar cell efficiency of the Au/n-Si diode degrades significantly from the ideal case (n factor equal to 1). The change of the efficiency of the Au/n-GaAs system with temperature, however, adheres closely to the ideal case. The difference between the results of these two systems is explained by the recombination current effect, which appears to be more significant in the Au/n-Si system.