THz generation mechanisms in the semiconductor alloy, GaAs1-xBix

Vaisakh, C. P.; Mascarenhas, Angelo; Kini, R. N.

doi:10.1063/1.4933290

Title: THz generation mechanisms in the semiconductor alloy, GaAs_1-xBi_x

Journal Article · Fri Oct 23 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4933290· OSTI ID:1233462

Vaisakh, C. P. ^[1]; Mascarenhas, Angelo ^[2];

^[1]

Indian Inst. of Science Education and Research Thiruvananthapuram (IISER-TVM), Kerala (India)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

We present measurements of the THz emission from GaAs_1–xBi_x epilayers excited with femtosecond laser pulses (λ ~ 800 nm). Here, we observed an increase in the peak-to-peak amplitude of the THz electric field with increasing Bi concentration. We also observed a polarity reversal of the THz transient in the epilayers with higher Bi concentration (x ≳ 1.4%). Taking into account the band gap reduction due to Bi incorporation and the excess energy of the carriers, our measurements suggest that there is a cross-over from a predominantly surface field emitter at low Bi concentrations (x ≲ 0.5%) to a predominantly photo-Dember field emitter at higher concentrations (x ≳ 1.4%).

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1233462

Alternate ID(s):: OSTI ID: 1224876

Report Number(s):: NREL/JA-5K00-65580; JAPIAU

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 16; Related Information: Journal of Applied Physics; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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References (14)

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Cited By (1)

Enhanced terahertz emission from Bi incorporated GaSb Vaisakh, C. P.; Bhowal, M. K.; Dhar, S. Journal of Physics D: Applied Physics, Vol. 51, Issue 6 https://doi.org/10.1088/1361-6463/aaa464	journal	January 2018

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Title: THz generation mechanisms in the semiconductor alloy, GaAs1-xBix

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Title: THz generation mechanisms in the semiconductor alloy, GaAs_1-xBi_x