There has been much recent interest in a so-called “giant-dielectric phenomenon” displayed by an unusual cubic perovskite-type material, however, the origin of the high permittivity has been unclear [M. A. Subramanian, L. Dong, N. Duan, B. A. Reisner, and A. W. Sleight, J. Solid State Chem. 151, 323 (2000); C. C. Homes, T. Vogt, S. M. Shapiro, S. Wakimoto, and A. P. Ramirez, Science 293, 673 (2001); A. P. Ramirez, M. A. Subramanian, M. Gardel, G. Blumberg, D. Li, T. Vogt, and S. M. Shapiro, Solid State Commun. 115, 217 (2000)]. Impedance spectroscopy on ceramics demonstrates that they are electrically heterogeneous and consist of semiconducting grains with insulating grain boundaries. The giant-dielectric phenomenon is therefore attributed to a grain boundary (internal) barrier layer capacitance (IBLC) instead of an intrinsic property associated with the crystal structure. This barrier layer electrical microstructure with effective permittivity values in excess of 10 000 can be fabricated by single-step processing in air at ∼1100 °C. is an attractive option to the currently used -based materials which require complex, multistage processing routes to produce IBLCs of similar capacity.
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25 March 2002
Research Article|
March 25 2002
One-step internal barrier layer capacitor
Derek C. Sinclair;
Derek C. Sinclair
Department of Engineering Materials, Sir Robert Hadfield Building, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Timothy B. Adams;
Timothy B. Adams
Department of Engineering Materials, Sir Robert Hadfield Building, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Finlay D. Morrison;
Finlay D. Morrison
Department of Engineering Materials, Sir Robert Hadfield Building, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Anthony R. West
Anthony R. West
Department of Engineering Materials, Sir Robert Hadfield Building, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Appl. Phys. Lett. 80, 2153–2155 (2002)
Article history
Received:
November 26 2001
Accepted:
January 24 2002
Citation
Derek C. Sinclair, Timothy B. Adams, Finlay D. Morrison, Anthony R. West; One-step internal barrier layer capacitor. Appl. Phys. Lett. 25 March 2002; 80 (12): 2153–2155. https://doi.org/10.1063/1.1463211
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