Intrinsic ferromagnetic semiconductivity realized in a new MoS2 monolayer†
Xiaohui
Deng 
*ab
and
Zhenyu
Li
a
*ab
and
Zhenyu
Li
a
Abstract
Magnetic semiconductors, with semiconductivity and ferromagnetism simultaneously, have promising important applications as storage devices. However, the ordered ferromagnetic state easily suffers from enhanced thermal fluctuation, inducing a very small Curie temperature. Here we have successfully predicted a new 2D small-gap MoS2 magnetic semiconductor. Instead, almost all of the reported MoS2 phase was nonmagnetic whether it exhibited semiconducting or metal behavior. Monte Carlo simulations showed that its Curie temperature could approach 130 K and could be further enhanced through applying biaxial tensile strain. The revealed atomic bonding pattern paves a new way to explore novel electronic and magnetic materials.
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