Issue 7, 2019
From the journal:

Nanoscale

Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material†

Kevin W. Silverstein,a   Christian E. Halbig,b   Jeremy S. Mehta,a   Anju Sharma,c   Siegfried Eigler ORCID logo b  and  Jeffrey M. Mativetsky ORCID logo *a  

* Corresponding authors

a Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, NY 13902, USA
E-mail: jmativet@binghamton.edu

b Institute of Chemistry and Biochemistry, Freie Universität Berlin, Takustraße 3, 14195 Berlin, Germany

c Small Scale Systems Integration and Packaging Center, Binghamton University, Binghamton, NY 13902, USA

Abstract

A highly conductive graphene derivative was produced by using a low-defect form of graphene oxide, oxo-G, in conjunction with voltage-reduction, a simple and environmentally-benign procedure for removing oxygen-containing functional groups. A low temperature coefficient of resistance was achieved, making this material promising for temperature-stable electronics and sensors.

Graphical abstract: Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material

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Article information

DOI
https://doi.org/10.1039/C8NR08285E
Article type
Communication
Submitted
12 Oct 2018
Accepted
10 Dec 2018
First published
10 Dec 2018

Nanoscale, 2019,11, 3112-3116

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Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material

K. W. Silverstein, C. E. Halbig, J. S. Mehta, A. Sharma, S. Eigler and J. M. Mativetsky, Nanoscale, 2019, 11, 3112 DOI: 10.1039/C8NR08285E

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