Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands

Dongfeng Qi; Shiwei Tang; Letian Wang; Shixun Dai; Xiang Shen; Chen Wang; Songyan Chen

doi:10.1039/C8NR00210J

Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands†

Dongfeng Qi,

*^abc Shiwei Tang,^a Letian Wang,^b Shixun Dai,^a Xiang Shen,

^a Chen Wang^d and Songyan Chen

Author affiliations

* Corresponding authors

^a Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang, People's Republic of China
E-mail: qidongfeng@nbu.edu.cn

^b Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, Berkeley, CA 94720-1740, USA

^c Department of Physics, Xiamen University, Xiamen, People's Republic of China

^d School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China

Abstract

Optically electric- and magnetic resonance-induced dielectric nanostructures have garnered significant attention due to applications as tunable electronic and optoelectronic device. In this letter, we describe an ultrafast and large-area method to construct symmetrical and single-crystal Si island structures directly on Si substrates by a pulse laser dewetting method. The tunable surface electric field intensity distribution could convert the stochastic dewetting process into a deterministic process (classical dipole mode and Mie resonance dipole mode) on predefined Si pit arrays via laser dewetting. Under this condition, these pre-patterned Si substrate structures not only induced high spatial ordering of islands, but also improved their size uniformity. By adjusting the laser fluence, the diameter of the single-crystal Si islands could be selected in the range 41.7–147.1 nm.

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Article information

DOI: https://doi.org/10.1039/C8NR00210J
Article type: Paper
Submitted: 09 Jan 2018
Accepted: 03 Apr 2018
First published: 03 Apr 2018

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Nanoscale, 2018,10, 8133-8138

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Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands

D. Qi, S. Tang, L. Wang, S. Dai, X. Shen, C. Wang and S. Chen, Nanoscale, 2018, 10, 8133 DOI: 10.1039/C8NR00210J

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Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands†

Abstract

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Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands

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