Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure

Yooun Heo; Daisuke Kan; Yuichi Shimakawa; Jan Seidel

doi:10.1039/C5CP05333A

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Resistive switching properties of epitaxial BaTiO_3−δ thin films tuned by after-growth oxygen cooling pressure†

Yooun Heo,^a Daisuke Kan,^b Yuichi Shimakawa^bc and Jan Seidel*^a

Author affiliations

* Corresponding authors

^a School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
E-mail: jan.seidel@unsw.edu.au

^b Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, Japan

^c Japan Science and Technology Agency, CREST, Uji, Kyoto 611-0011, Japan

Abstract

BaTiO_3−δ, i.e. oxygen-deficient barium titanate (BaTiO₃), thin films grown on GdScO₃(110) substrates with SrRuO₃ conductive electrodes by pulsed laser deposition are studied by X-ray diffraction and conductive AFM to characterize their structure and nanoscale electronic properties. Bias- and time-dependent resistive switching measurements reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films. The results indicate that the resistive switching properties of BaTiO_3−δ can be enhanced by controlling oxygen deficiency and provide new insight for potential non-volatile resistive random-access memory (RRAM) applications.

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Article information

DOI: https://doi.org/10.1039/C5CP05333A
Article type: Paper
Submitted: 07 Sep 2015
Accepted: 08 Nov 2015
First published: 25 Nov 2015

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Phys. Chem. Chem. Phys., 2016,18, 197-204

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Resistive switching properties of epitaxial BaTiO_3−δ thin films tuned by after-growth oxygen cooling pressure

Y. Heo, D. Kan, Y. Shimakawa and J. Seidel, Phys. Chem. Chem. Phys., 2016, 18, 197 DOI: 10.1039/C5CP05333A

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