Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory

Xiaoning Zhao; Haiyang Xu; Zhongqiang Wang; Zhe Xu; Cen Zhang; Guorui Wang; Weizhen Liu; Jiangang Ma; Yichun Liu

doi:10.1039/C7TC00712D

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Sp² clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory†

Xiaoning Zhao,^ab Haiyang Xu,

*^a Zhongqiang Wang,*^a Zhe Xu,^a Cen Zhang,^a Guorui Wang,^a Weizhen Liu,^a Jiangang Ma^a and Yichun Liu^a

Author affiliations

* Corresponding authors

^a Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
E-mail: hyxu@nenu.edu.cn, wangzq752@nenu.edu.cn

^b Key Laboratory for Anisotropy and Texture of Materials (MoE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China

Abstract

We studied the influence of sp² clustering on resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory. Herein, a simple method was utilized to adjust the degree of sp² clustering by changing compliance currents (CCs). The small sp² clusters within the a-C layer were found to condense into larger clusters with increasing CCs because of the CC-dependent Joule heating effect. Raman spectra experimentally verified the increase of sp² cluster diameter with increasing CCs. Importantly, a switching uniformity improvement can be obtained by increasing the degree of sp² clustering. The enhanced local electric field around sp² clusters can account for the reduction of the Cu conductive filament randomness and corresponding improvement of memory performance.

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Article information

DOI: https://doi.org/10.1039/C7TC00712D
Article type: Paper
Submitted: 15 Feb 2017
Accepted: 11 May 2017
First published: 12 May 2017

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J. Mater. Chem. C, 2017,5, 5420-5425

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Sp² clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory

X. Zhao, H. Xu, Z. Wang, Z. Xu, C. Zhang, G. Wang, W. Liu, J. Ma and Y. Liu, J. Mater. Chem. C, 2017, 5, 5420 DOI: 10.1039/C7TC00712D

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Journal of Materials Chemistry C