Issue 92, 2016, Issue in Progress
From the journal:

RSC Advances

Phosphonic acid self-assembled monolayer improved the properties of n-type organic field-effect transistors in air ambient†

Li Cao,a   Yue Penga  and  Zhefeng Li*a  

* Corresponding authors

a College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, PR China
E-mail: zhefeng@cqu.edu.cn

Abstract

Here we report an approach to surface modification of the SiO2 gate dielectric on a Si device based on a simple procedure in which a dilute solution of a phosphonic acid is drawn down across the surface of the Si substrate. A crystalline thin film of NDI-C14 was successfully grown by vapor deposition on the surface of SAM modified dielectrics and obtained improved electron mobility up to 4.23 × 10−2 cm2 V−1 s−1 at room temperature in air ambient. Three SAM (ODPA, TDPA, and NAPA) modified dielectrics increased the electron mobility of the NDI-C14 by three orders of magnitude compared to that on bare SiO2. The improvement of electron mobility is associated with the close packing arrangement of NDI-C14 film on different SAMs.

Graphical abstract: Phosphonic acid self-assembled monolayer improved the properties of n-type organic field-effect transistors in air ambient

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Article information

DOI
https://doi.org/10.1039/C6RA17255E
Article type
Paper
Submitted
05 Jul 2016
Accepted
13 Sep 2016
First published
13 Sep 2016

RSC Adv., 2016,6, 89794-89798

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Phosphonic acid self-assembled monolayer improved the properties of n-type organic field-effect transistors in air ambient

L. Cao, Y. Peng and Z. Li, RSC Adv., 2016, 6, 89794 DOI: 10.1039/C6RA17255E

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