Issue 44, 2015

Substitution of silicon within the rhombohedral boron carbide (B4C) crystal lattice through high-energy ball-milling

Abstract

Boron carbide (B4C) is a ceramic with a structure composed of B12 or B11C icosahedra bonded to each other and to three (C and/or B)-atom chains. Despite its excellent hardness, B4C fails catastrophically under shock loading, but substituting other elements into lattice sites may change and possibly improve its mechanical properties. Density functional theory calculations of elemental inclusions in the most abundant polytypes of boron carbide, B12-CCC, B12-CBC, and B11Cp-CBC, predict that the preferential substitution site for metallic elements (Be, Mg and Al) is the chain center atom and that for non-metallic elements (N, P and S) it is generally the chain end atom of the three-atom chain in B4C's rhombohedral crystal lattice. However, Si, a semi-metal, seems to prefer the chain center in B12-CCC and icosahedral polar sites in both B12-CBC and B11Cp-CBC. As a first step to testing the feasibility of elemental substitutions experimentally, Si atoms were incorporated into B4C at low temperatures (∼200–400 °C) by high-energy ball-milling. High-resolution transmission electron microscopy showed that the Si atoms were uniformly dispersed in the product, and the magnitude of the lattice expansion and Rietveld analysis of the X-ray diffraction data were analyzed to determine the likely sites of Si substitution in B4C. Further corroborative evidence was obtained from electron spin resonance spectroscopy, magic-angle spinning nuclear magnetic resonance spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy characterizations of the samples. Thus, a simple, top-down approach to manipulating the chemistry of B4C is presented with potential for generating materials with tailored properties for a broad range of applications.

Graphical abstract: Substitution of silicon within the rhombohedral boron carbide (B4C) crystal lattice through high-energy ball-milling

Supplementary files

Article information

Article type
Paper
Submitted
16 Sep 2015
Accepted
12 Oct 2015
First published
13 Oct 2015

J. Mater. Chem. C, 2015,3, 11705-11716

Author version available

Substitution of silicon within the rhombohedral boron carbide (B4C) crystal lattice through high-energy ball-milling

M. K. Kolel-Veetil, R. M. Gamache, N. Bernstein, R. Goswami, S. B. Qadri, K. P. Fears, J. B. Miller, E. R. Glaser and T. M. Keller, J. Mater. Chem. C, 2015, 3, 11705 DOI: 10.1039/C5TC02956B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements