Issue 95, 2015

Molecular dynamics simulation of the slip systems in VN

Abstract

We calculate the generalized stacking fault (GSF) energies along different slip directions in various slip planes of VN, aimed to probe the mechanical properties of different slip systems of VN. We find that the 〈110〉 directions on various slip planes exhibit the lowest maximum GSF energies among the possible slip directions, and the sequence of the maximum GSF energies along the 〈110〉 directions on the possible slip planes is W{110} < W{111} < W{001}, implying that the sequence of the slip planes in VN is {110}, {111} and {001}. We also find that on the {111} planes, the slip can form two Shockley partial dislocations oriented by 〈112〉, resulting in a perfect dislocation on the 〈110〉 directions. The predicted sequence of the slip planes during indentation agrees with that assessed by the maximum GSF energies.

Graphical abstract: Molecular dynamics simulation of the slip systems in VN

Article information

Article type
Paper
Submitted
07 Aug 2015
Accepted
09 Sep 2015
First published
15 Sep 2015

RSC Adv., 2015,5, 77831-77838

Molecular dynamics simulation of the slip systems in VN

T. Fu, X. Peng, Y. Zhao, R. Sun, D. Yin, N. Hu and Z. Wang, RSC Adv., 2015, 5, 77831 DOI: 10.1039/C5RA15878H

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