Photovoltaic devices with a PEDOT:PSS:WOx hole transport layer

Seung Joo Lee; Abd. Rashid bin Mohd Yusoff; Jin Jang

doi:10.1039/C4RA01580K

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Photovoltaic devices with a PEDOT:PSS:WO_x hole transport layer†

Seung Joo Lee,^a Abd. Rashid bin Mohd Yusoff^a and Jin Jang*^a

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* Corresponding authors

^a Department of Information, Display and Advanced Display Research Center, Kyung Hee University, Dongdaemun-ku, Seoul 130-171, Republic of Korea
E-mail: jjang@khu.ac.kr
Fax: +82 2 961 0270
Tel: +82 2 961 0270

Abstract

In this paper, we report a significantly improved fill factor (FF) of inverted poly(3-hexylthiophene) (P3HT) and indene-C₆₀ bisadduct (ICBA) organic photovoltaic devices via surface modification. The influence of the poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) hole extraction layer (HEL) modified with tungsten oxide (WO_x) on inverted organic photovoltaics is studied. It is demonstrated that the PEDOT:PSS:WO_x modification leads to a remarkably high FF, while abruptly reducing the series resistance and at the same time increasing the shunt resistance. The efficiency increased from 3.93 to 5.37%, and it is demonstrated that PEDOT:PSS modified with WO_x HEL is an attractive material for high performance organic photovoltaic devices.

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Article information

DOI: https://doi.org/10.1039/C4RA01580K
Article type: Paper
Submitted: 23 Feb 2014
Accepted: 14 Apr 2014
First published: 15 Apr 2014

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RSC Adv., 2014,4, 20242-20246

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Photovoltaic devices with a PEDOT:PSS:WO_x hole transport layer

S. J. Lee, Abd. R. bin Mohd Yusoff and J. Jang, RSC Adv., 2014, 4, 20242 DOI: 10.1039/C4RA01580K

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