Elsevier

Ceramics International

Volume 46, Issue 16, Part A, November 2020, Pages 24850-24859
Ceramics International

Effect of bismuth incorporation on thermal properties of quaternary chalcogenide glass Se80Te15-xCd5Bix (x=0,5,10) alloys

https://doi.org/10.1016/j.ceramint.2020.06.269Get rights and content

Abstract

Differential scanning calorimetry has been employed to investigate the thermal properties of Se80Te15-xCd5Bix (x = 0, 5, 10) glass system. The Variation of characteristic temperatures such as glass transition temperature (Tg), onset crystallization temperature (Tc), peak crystallization temperature (Tp) and melting temperature (Tm) are studied as a function of composition and heating rate. A stepwise increase in values of characteristic temperatures has been observed with the increase in heating rate. Further, obtained values of characteristic temperatures display decreasing trend with increase in bismuth concentration. The compositional and heating rate dependence of Thermal parameters such as glass forming ability (ΔT), thermal stability (Hg), enthalpy (ΔH) and entropy (ΔS) has been investigated. It has been observed that ΔT and Hg have lowest and highest values for Se80Te5Cd5Bi10 and Se80Te15Cd5 compositions respectively. Avrami index (n) and activation energy for crystallization (Ec) have been calculated for all the samples. Values of n obtained for Se80Te15Cd5, Se80Te15Cd5 Bi5 and Se80Te5Cd5Bi10 compositions are found to be 1.44, 2.16 and 2.16 respectively. Based on the obtained values of n, the nucleation process in alloys is discussed. It is noteworthy to mention that least value of Ec is observed for the alloy Se80Te5Cd5Bi10 containing the highest amount of bismuth. Furthermore, calculated thermal parameters are used to anticipate the electrical switching behavior of the alloys.

Introduction

Chalcogenide glasses show interesting optical properties such as high-refractive index, transparency in mid and far infra-red regions. These glasses find applications in thermal imaging systems which can be employed in vehicles (for driver's vision enhancement), surveillance and military applications. The semiconducting properties of chalcogenide glasses were first reported by professor B.T. Kolomiets [1,2], ever since these materials are under extensive investigation. Further, owing to their potential to be used in photolithography [3], electro-optics and electronics [4], Chalcogenide glasses are now subject of extensive research in these areas. Chalcogenide glasses being phase change materials also find applications in phase change memory devices (PCMs) [[5], [6], [7], [8]]. The Binary and ternary chalcogenide glasses have been investigated extensively in recent years [[9], [10], [11]], including ternary SeTeCd and SeTeBi systems [[12], [13], [14]]. Keeping in view the wide range of applications of chalcogenide glasses, present work elucidates the amorphous to crystalline phase change in selenium (Se) dominant quaternary alloys by incorporating bismuth in ternary SeTeCd glass.

Owing to its property of reversible transformation, Se is a common choice for fabrication of chalcogenide glasses for use in PCM application. Adding metallic components such as Cd and Bi help to overcome some of the disadvantages, such as low sensitivity and high resistivity of pure Se. As per our knowledge, no work has been done yet to investigate the thermal properties of Se-based quaternary chalcogenide glasses containing tellurium (Te), cadmium (Cd) and bismuth (Bi). We have used Cd because chalcogenide glasses containing Cd are of great importance in semiconductor applications [[15], [16], [17]], furthermore doping of Cd in chalcogenide glasses has favorable effects on glass forming ability and specific heat of glasses [58]. It has been reported [59] that Cd incorporation to binary Se–Te chalcogenide glass has significant impact on the electrical conductivity, optical band gap and thermal activation energy. Moreover, Bi incorporated chalcogenide glasses have been studied by various researchers and studies revealed that Bi doping effectively enhances the semiconducting properties of chalcogenide glasses [18,19].

Crystallization kinetics of chalcogenide glassy alloys is a qualitative analysis of the characteristic temperatures and other thermal properties. In present work differential scanning calorimetry (DSC) and differential thermal analysis (DTA) techniques are used to study the crystallization kinetics of Se80Te15-xCd5Bix glasses. Different statistical methods are employed to calculate the activation energy of crystallization of the alloys. Amorphous and polycrystalline nature of alloys has been identified by using the X-ray diffraction (XRD) technique. To study the surface morphology and chemical composition of the alloys, we have used scanning electron microscopy (SEM) equipped with an energy dispersive X-ray analyzer (EDAX). Process of crystallization is explained based on the obtained value of the Avrami index (n) for different alloys.

Section snippets

Material preparation, XRD and surface morphological studies

Bulk Se80Te15-xCd5Bix (x = 0, 5, 10) alloys were prepared by the conventional melt quenching technique. High purity elements, in required atomic percentage were weighed using an electronic balance with a least count of 0.1 mg. Powdered mixtures (5 gm each) of elements were sealed in pre-cleaned evacuated (~10-5 Torr) quartz ampoules (length ~ 7 cm, internal diameter ~12 mm and outer diameter 14 mm). The loaded ampoules were kept inside the programmable furnace at a temperature of 1123 K and in

Effect of composition on structure and morphology of the samples

Fig. 1 shows the XRD spectra of as prepared Se80Te15Cd5, Se80Te10Cd5Bi5 and Se80Te5Cd5Bi10 bulk glasses. The effect of adding Bi content in the samples can be seen, the samples having Bi content display greater degree of crystallinity and are found to exhibit polycrystalline nature with a limited presence of amorphous phase. The hkl values are deduced from the method as used by Saifu Ibahati Sempeho [20] et al. On Investigating the XRD pattern more closely it was observed that the degree of

Merits of Bi incorporation in prepared sample for phase change memory application

Electrical switching behavior of chalcogenide glasses containing Se and Te has been studied by various researchers [49,50]. An important property of chalcogenide glasses exploited in phase change memory is Threshold switching. Threshold switching takes place as soon as voltages applied to the material exceeds a threshold value, Vth. When a threshold voltage (Vth) is exceeded, the chalcogenide glass initially in amorphous phase (high electrical resistance phase) switches rapidly to a highly

Conclusion

We conclude that the nature (crystallinity) of compounds formed depends on the concentration of the Bi. The Se80Te5Cd5Bi10 glass shows higher degree of crystallinity than Se80Te10Cd5 and Se80Te10Cd5Bi5 compositions. The Characteristic temperatures (Tg, Tc, Tp, and Tm) shifts to the higher values with the increase in the heating rates. It is evident from the results that characteristic temperatures have lower values for Se80Te5Cd5Bi10 composition than the other two compositions. Glass forming

Declaration of competing interestCOI

The authors declare that they have no known competing financial interests or personal relationship that could have appeared to influence the work reported in this paper.

Acknowledgements

The authors would like to thank the central instrumentation facility (CIF) Jamia Millia Islamia, New Delhi, for extending the DSC and DTA facility.

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