Elsevier

Synthetic Metals

Volume 92, Issue 3, 15 February 1998, Pages 229-233
Synthetic Metals

Pressure-induced metallic resistivity of PF6 doped poly(3-methylthiophene)

https://doi.org/10.1016/S0379-6779(98)80091-XGet rights and content

Abstract

Electrical resistivity of poly(3-methylthiophene) doped with PF6 has been studied under pressure up to 13 kbar using a self-clamped beryllium-copper pressure cell. Application of the pressure induces a metallic temperature dependence in resistivity at low temperatures. Below about 4 K, T12 dependence in electrical conductivity was observed, which can be explained taking the electron-electron interaction in a disordered system into account. We show that the extended heterogeneous model by Kaiser and Graham gives a good fit to the temperature dependence of the conductivity at low temperatures in the whole range of the pressure applied.

References (34)

  • J.P. Pouget et al.

    Synth. Met.

    (1994)
  • Y. Nogami et al.

    Synth. Met.

    (1994)
  • S. Masubuchi et al.

    Synth. Met.

    (1997)
  • K. Sato et al.

    Synth. Met.

    (1991)
  • M. Reghu et al.

    Synth. Met.

    (1994)
  • A.B. Kaiser et al.

    Synth. Met.

    (1990)
  • Y.W. Park et al.

    Solid State Commun.

    (1983)
  • J.F. Kwak et al.

    Solid State Commun.

    (1979)
  • A.B. Kaiser et al.

    Synth. Met.

    (1995)
  • S. Masubuchi et al.

    Synth. Met.

    (1993)
  • S. Masubuchi et al.

    Synth. Met.

    (1987)
  • S. Masubuchi et al.

    Synth. Met.

    (1995)
  • S. Masubuchi et al.

    Synth. Met.

    (1995)
  • S. Masubuchi et al.

    Synth. Met.

    (1995)
  • K. Mizoguchi et al.

    Solid State Commun.

    (1995)
  • K. Mizoguchi et al.

    Synth. Met.

    (1997)
  • A.B. Kaiser

    Mater. Sci. Forum

    (1993)
  • View full text