Defects in thin amorphous Si films deposited with and without Ar+ ion assistance
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Cited by (6)
Low-energy ion-assisted control of interfacial structures in metallic multilayers
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2006, Thin Solid FilmsMethods of deposition of hydrogenated amorphous silicon for device applications
2002, Thin Films and NanostructuresCitation Excerpt :In the field of PECVD of amorphous or diamondlike carbon, it is assumed that ions are of prime importance for the formation of dense material [409]. Others also stress the importance of ion bombardment on film properties [410–412]. In addition, in electron beam deposition of amorphous silicon it was shown that the formation of microvoids is inhibited when Ar+ assistance is used during deposition [413].
Defects and morphological changes in nanothin Cu films on Mo(100) studied by thermal helium desorption spectrometry
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