Ion beam assisted deposition—a processing technique for preparing thin films for high-technology applications☆
Introduction
The technique of ion beam assisted deposition (IBAD) characterized by the bombardment of thin films with energetic particles provides thin films and coatings with modified microstructure and properties. The additional energy imparted to the deposited atoms causes atomic displacements in the growing film and enhanced surface atom migration. This can result in improved film properties, which include formation of new phases, enhancement of the heteroepitaxy, modification of the residual stress and better adhesion of thin films (for details, see review articles [1], [2], [3], [4]). In contrast to the intensive research in this area in the last years, little is known about the commercial application of IBAD. The purpose of the paper is to report about the recent applications of this technique in industry.
Section snippets
Process of IBAD
The most common geometry used in IBAD is described in detail elsewhere (see Refs. [1], [2], [3], [4]). The ions from an ion source impinge on the substrate simultaneously with the deposited atoms. The majority of ion sources being used for IBAD are of a broad-beam design (Kaufman source). Other ion sources are the Hall-current source and the electron cyclotron resonance source. Electron beam evaporators, effusion cells or sputtering targets are used for the physical vapour deposition. A small
Application of the IBAD technique
In recent years, many results about thin films and their properties produced by ion beam assisted deposition have been published (see, e.g. Refs. [1], [2], [3], [4]). However, work is still necessary to optimize the IBAD technique to fabricate high-quality films in a way that is fully compatible with the existing process technologies. Therefore, research efforts should be focused on the realization of suitable process methods and on the investigation of processing-microstructure property
Summary
Ion beam assisted deposition represents a superior method for defined modification of the surface layers and production of coatings. It has been demonstrated that the most important pre-requisite for deposition of high-quality films by IBAD are ion sources and suitable equipment. For this the new developed ECR ion source has been used together with the Cyberite ion deposition machine. Finally, the preparation of GMR spin valve sensor, Mo/Si multilayers for a EUV lithography and Cu(In,Ga)Se
Acknowledgements
The author wishes to thank T. Chassè, W. Frank, F. Frost, D. Hirsch, H. Neumann, H. Otto, A. Schindler (IOM Leipzig), A. Hellmich, B. Ocker, M. Scherer (Unaxis Deutschland GmbH Alzenau), M. Haidl, S. Müllander (Carl Zeiss Oberkochen), M. Lorenz, G. Wagner (Universität Leipzig), M. Zeuner, C. Riedel (IOT GmbH Leipzig) and G. Lippold (Solarion GmbH Leipzig).
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Paper presented at the 12th International School on Vacuum, Electron and Ion Technologies, 17–21 September, Varna, Bulgaria.