Elsevier

Physics Letters A

Volume 319, Issues 3–4, 8 December 2003, Pages 367-372
Physics Letters A

The electric field effect on spin injection in tunneling regime

https://doi.org/10.1016/j.physleta.2003.09.076Get rights and content

Abstract

Using the quantum tunneling theory, we investigate the spin-dependent transport properties of the ferromagnetic metal/Schottky barrier/semiconductor heterojunction under the influence of an external electric field. It is shown that increasing the electric field, similar to increasing the electron density in semiconductor, will result in a slight enhancement of spin injection in tunneling regime, and this enhancement is significantly weakened when the tunneling Schottky barrier becomes stronger. Temperature effect on spin injection is also discussed.

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Acknowledgements

This work was supported by Australian Research Council under Project LX0347471; D.Y. Xing thanks support from the National Natural Science Foundation of China under Grant No. 10174011 and the state key programs for Basic Research of China.

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