Elsevier

Synthetic Metals

Volume 9, Issue 1, January–March 1984, Pages 77-86
Synthetic Metals

Synthesis and properties of chemically coupled poly(thiophene)

https://doi.org/10.1016/0379-6779(84)90044-4Get rights and content

Abstract

We describe the synthesis and physical properties of poly(thiophene) with a molecular weight of approximately 4000 consisting of 46 – 47 thiophene rings (184 – 188 carbons along the backbone). The pristine polymer exhibits an ESR line similar to that of cis-(CH)x; the small number of unpaired spins is consistent with relatively high-quality material. The electrical conductivity can be increased by nearly ten orders of magnitude to values in excess of 10 Ω−1cm−1 upon partial oxidation by AsF5. The magnitude and temperature dependence of the thermopower of the doped polymer (24 mol%) are consistent with metallic behavior. The decrease in conductivity as the temperature is lowered and the magnitude of π at room temperature apparently result from the macroscopic transport being limited by interparticle contacts.

References (18)

  • J.W.-P. Lin et al.

    J. Polym. Sci., Polym. Chem. Edn.

    (1980)
  • S.A. Brazovskii et al.

    Zh. Ebsp. Teor. Fiz Pisma Red.

    (1981)
    S.A. Brazovskii et al.

    JETP Lett.

    (1981)
  • A.J. Heeger

    Comments on Solid State Physics

    (1981)
    L. Lauchlan et al.

    Phys. Rev. B

    (1981)
  • K. Fesser et al.

    Phys. Rev. B

    (1983)
  • J.L. Bredas et al.

    Mol. Cryst. Liq. Cryst.

    (1981)
  • G.B. Street et al.

    Polym. Prepr., Am. Chem. Soc. Div. Polym. Chem.

    (1982)
  • A. Diaz

    Chem. Scripta

    (1981)
  • G. Tourillon et al.

    J. Electroanal. Chem.

    (1982)
  • T. Yamamoto et al.

    J. Polym. Sci., Polym. Lett.

    (1980)
There are more references available in the full text version of this article.

Cited by (324)

  • Polymerization Reactions via Cross Coupling

    2022, Comprehensive Organometallic Chemistry IV: Volume 1-15
  • Structural, electronic and optical properties of furan based materials at bulk level for photovoltaic applications: A first-principles study

    2019, Computational and Theoretical Chemistry
    Citation Excerpt :

    The Fig. 6 displays that valance band maximum (VBM) of FTTF is originated on point G in BZ, while the conduction band minimum (CBM) is originated on point X in BZ, illuminating the indirect band-gap nature of FTTF with 1.765 eV band gap from G to X symmetrical points. The experimental valued of bandgap for polythiophene has been reported as 2.0 eV [40]. The computed bandgap of FTTF is less than polythiophene revealing that the FTTF might be better materials for conduction layer in semiconductor devices than the aforementioned polythiophene.

View all citing articles on Scopus
View full text