Elsevier

Thin Solid Films

Volume 225, Issues 1–2, 25 March 1993, Pages 288-295
Thin Solid Films

Growth of titanium dioxide thin films by atomic layer epitaxy

https://doi.org/10.1016/0040-6090(93)90172-LGet rights and content

Abstract

Titanium dioxide thin films were deposited by atomic layer epitaxy using TiCl4 and water as reactants. The film growth was performed over the temperature range 150–600 °C in order to study the effects of temperature on the growth rate. The effect of the substrate material on the growth rate and crystal structure was also investigated. Spectrophotometry, X-ray diffraction, Rutherford backscattering spectroscopy and nuclear reaction analysis were used to determine the chemical and physical characteristics of the films. The growth mechanism is discussed on the basis of literature and results obtained.

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