Elsevier

Thin Solid Films

Volume 9, Issue 2, February 1972, Pages 207-218
Thin Solid Films

Electron tunnelling into amorphous germanium and silicon

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Abstract

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminium-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses of these systems from the aluminium-oxide-aluminium system.

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