Oxygen induced reconstruction of (h11) and (100) faces of copper

doi:10.1016/0039-6028(92)90037-7

Surface Science

Volume 260, Issues 1–3, 1 January 1992, Pages 235-244

https://doi.org/10.1016/0039-6028(92)90037-7 Get rights and content

Abstract

A LEED and AES study on oxygen adsorption on Cu(100) and (h11) faces with 5 ⩽ h ⩽ 15 has been performed under various adsorption conditions (220 K ⩽ T ⩽ 670 K and 1 × 10⁻⁸ ⩽ P ⩽ 6 × 10⁻⁵ Torr of oxygen). The dependence of adsorption temp on the oxygen surface superstructures is pointed out. At least, three oxygen surface states exist on a Cu(100) face. For low temperature exposures to oxygen, under conditions of slow surface diffusion, on the (100) face, two oxygen surface phases exist: a “four spots” and a c(2 × 2) superstructure, both observed even at saturation coverage; on all the stepped faces, a c(2 × 2) appears and no faceting is observed. For high temperature exposures, on the (100) face, two oxygen superstructures are observed, a “four spots” followed by a (2√2 × √2)R45° at higher coverages; on all the stepped faces, surface diffusion is activated and oxygen induced faceting occurs. The appearance of faceting is associated with the onset of the formation of the (2√2 × √2)R45° structure on the (100) face. The oxygen induced faceting and the oxygen surface meshes are reversible with coverages. At saturation coverage, a non-reversible surface transition between the c(2 × 2) and (2√2 × √2)R45° superstructures is observed at 420 ± 20 K. The importance of impurity traces on the surface meshes is emphasized. Oxygen coverage at saturation is independent of the studied faces and adsorption temperature. Faceting occurs at a critical coverage value, whatever the stepped faces and adsorption temperature are. Models of the oxygen structure on the (h10) stepped faces are discussed.

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Oxygen induced reconstruction of (h11) and (100) faces of copper

Abstract

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