Silicon heteroepitaxy: interface structure and physical properties
References (40)
- et al.
Silicon Molecular Beam Epitaxy
- et al.
Phys. Rev. Letters
(1989) - et al.
Phys. Rev. Letters
(1990) - L. Tapfer, to be...
- R. Stalder and H.J. Gübeli, to be...
- et al.
J. Vacuum Sci. Technol.
(1988) - et al.
Silicon Molecular Beam Epitaxy
- et al.
Appl. Phys. Letters
(1985)Erratum
Appl. Phys. Letters
(1986) - et al.
Phys. Rev. Letters
(1986) - K. Eberl, private...
Mater. Res. Soc. Symp. Proc.
(1987)
Appl. Phys. Letters
(1986)
Phys. Rev. Letters
(1987)
Phys. Rev. Letters
(1989)
Phys. Rev.
(1988)
Phys. Rev.
(1987)
Phys. Rev.
(1988)
J. Crystal Growth
(1989)
Phys. Rev. Letters
(1985)
Cited by (5)
Simulations of carbon containing semiconductor alloys: Bonding, strain compensation, and surface structure
1998, International Journal of Modern Physics COrdering in Si-Ge superlattices
1994, Physical Review BInterfacial stability and intermixing in thin-layer Sin/Gen superlattices
1994, Physical Review BMagnetron sputter epitaxy of Si<inf>m</inf>Ge<inf>n</inf>/Si(001) strained-layer superlattices
1994, Applied Physics Letters
Copyright © 1991 Published by Elsevier B.V.