Silicon heteroepitaxy: interface structure and physical properties

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Abstract

The interfaces in strained-layer SimGen superlattice (SLs) characterized by X-ray diffraction, Raman scattering and scanning tunneling microscopy are shown to deviate from the idealized form assumed in most calculations on electronic and optical properties. Electron microscopic investigations reveal that along the interfaces there exist thin regions of ordered alloys. In Si-rich SLs, the structure of these regions is dominated by growth-induced rhombohedral RS2 order, whereas with increasing Ge-content the fraction of RS1 domains becomes larger. The RS1 structure is found to be reversible, while the RS2 structure is not. Theoretical models, taking into account either growth kinetics or ground state properties, cannot explain all of the observed features.

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