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Dielectric properties and device performance of (Pb0.7 Dy0.15 Bi0.15)(Fe0.3Ti0.7)O3 electronic material

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Abstract

A dysprosium-modified BiFeO3-PbTiO3 electronic sample [chemical composition of (Pb0.7 Dy0.15 Bi0.15)(Fe0.3Ti0.7)O3] is synthesized through high-temperature mixed oxide/solid-state reaction route. The resistive, conducting, and capacitive behaviour of the fabricated sample is examined in various experimental conditions. The structural evaluation of the specimen is conducted using X-ray diffraction (XRD) data confirming the tetragonal symmetry. The microstructural study reveals the polycrystalline nature of the prepared electronic system. The AC conductivity of the material gives information on the conduction process of the sample. Analysis of impedance spectroscopy data indicates the presence of a non-Debye type of relaxation process in the material. The existence of electric polarization loop affirms the presence of ferroelectric characteristics of the material at room temperature. The material has a low tangent loss, high dielectric permittivity and remnant polarization properties of 0.03, 450 and 0.014 μC/cm2, respectively, at room temperature. The preliminary investigation of performance parameter of the sample (i.e., Dy-modified BiFeO3-PbTiO3) shows enhanced electrical properties, thus formulating it as stronger entrant for functional devices.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, ITER, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, 751030, India

    Satish K. Samal, Sarbasri Halder, Satyanarayan Bhuyan, Manas Kumar Mallick & R. N. P. Choudhary

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  1. Satish K. Samal
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  2. Sarbasri Halder
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  3. Satyanarayan Bhuyan
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  5. R. N. P. Choudhary
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Samal, S.K., Halder, S., Bhuyan, S. et al. Dielectric properties and device performance of (Pb0.7 Dy0.15 Bi0.15)(Fe0.3Ti0.7)O3 electronic material. J Aust Ceram Soc 56, 1617–1624 (2020). https://doi.org/10.1007/s41779-020-00506-9

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