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Graphene prepared by chemical vapour deposition process

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Abstract

The submitted work is focused on graphene preparation using the chemical vapour deposition method employing a cost-saving cold-wall reactor. Optimization of the parameters and conditions of the growth technology was pursued. We succeeded in preparing and transferring monolayer graphene onto a dielectric substrate and in studying its properties by various analytical methods in great detail. The transferred graphene material displays well-resolved band structure. The band structure evidences that undoped material was prepared, with Dirac points lying at the Fermi level.

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Acknowledgements

This study was supported by the Czech Science Foundation, Project No. 17-00607S.

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Authors and Affiliations

  1. Department of Solid State Engineering, University of Chemistry and Technology, Technicka 5, 166 28, Prague 6, Czech Republic

    Petr Machac

  2. Institute of Physics, ASCR, v.v.i, Na Slovance 1999/2, 182 21, Prague 8, Czech Republic

    Stanislav Cichon & Ladislav Fekete

  3. Central Laboratories, University of Chemistry and Technology, Technicka 5, Prague 6, Czech Republic

    Ladislav Lapcak

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  1. Petr Machac
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  2. Stanislav Cichon
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  3. Ladislav Lapcak
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  4. Ladislav Fekete
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Correspondence to Petr Machac.

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Machac, P., Cichon, S., Lapcak, L. et al. Graphene prepared by chemical vapour deposition process. Graphene Technol 5, 9–17 (2020). https://doi.org/10.1007/s41127-019-00029-6

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  • DOI: https://doi.org/10.1007/s41127-019-00029-6

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