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Development of wide band gap p-a-SiOxCy:H using additional trimethylboron as carbon source gas

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Abstract

We report p-type a-SiOxCy:H thin films which were fabricated by introducing additional Trimethylboron (TMB, B(CH3)3) doping gas into conventional standard p-type a-SiOx:H films. The TMB addition into the condition of p-a-SiOx:H improved optical bandgap from 2.14 to 2.20 eV without deterioration of electrical conductivity, which is promising for p-type window layer of thin film solar cells. The suggested p-a-SiOxCy:H films were applied in amorphous silicon solar cells and we found an increase of quantum efficiency at short wavelength regions due to wide bandgap of the new p-layer, and thus efficiency improvement from 10.4 to 10.7% was demonstrated in a-Si:H solar cell by employing the p-a-SiOxCy:H film. In case of a-SiOx:H cell, high open circuit voltage of 1.01 V was confirmed by using the suggested the p-a-SiOxCy:H film as a window layer. This new p-layer can be highly promising as a wide bandgap window layer to improve the performance of thin film silicon solar cells.

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Authors and Affiliations

  1. Department of Solar & Energy Engineering, Cheongju University, Cheongju, 28503, Korea

    Dong-Won Kang

  2. MEXT/FUTURE-PV Innovation Research, JST, Fukushima, 963-0215, Japan

    Porponth Sichanugrist, Bancha Janthong, Muhammad Ajmal Khan & Makoto Konagai

  3. Photovoltaic Materials Unit, National Institute for Materials Science, Ibaraki, 305-0047, Japan

    Chisato Niikura

  4. Advanced Research Lab., Tokyo City University, 8-5-1, Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan

    Makoto Konagai

Authors
  1. Dong-Won Kang
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  2. Porponth Sichanugrist
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  3. Bancha Janthong
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  4. Muhammad Ajmal Khan
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  5. Chisato Niikura
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  6. Makoto Konagai
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Correspondence to Makoto Konagai.

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Kang, DW., Sichanugrist, P., Janthong, B. et al. Development of wide band gap p-a-SiOxCy:H using additional trimethylboron as carbon source gas. Electron. Mater. Lett. 12, 462–467 (2016). https://doi.org/10.1007/s13391-016-4007-y

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  • DOI: https://doi.org/10.1007/s13391-016-4007-y

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