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CdS nanocrystals formed in amorphous GeS2:Cd films by photoenhanced diffusion

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Abstract

Amorphous Cd-doped GeS2 films were prepared by thermal evaporation. In the Raman spectra of GeS2:Cd films with nominal Cd content above 8% at high laser power densities (above 200 kW/cm2), Raman peaks of the CdS LO and 2LO phonons are observed as evidence for the formation of CdS nanocrystals in the films under laser irradiation. The nanocrystals are formed due to the photoenhanced diffusion of atoms in the GeS2:Cd films, which is caused by non-thermal photofluidity (a drastic decrease of the film viscosity under illumination) that enables the aggregation of Cd and S atoms in nanocrystals. Factors responsible for the variation of the CdS LO phonon peak as a function of laser power density are discussed.

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Acknowledgements

Y. M. Azhniuk is grateful to Chemnitz University of Technology (Visiting Scholar Program) for the financial support of his research stay at the university.

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Correspondence to Yuriy M. Azhniuk.

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Azhniuk, Y.M., Lopushansky, V.V., Solonenko, D. et al. CdS nanocrystals formed in amorphous GeS2:Cd films by photoenhanced diffusion. Appl Nanosci 12, 1091–1099 (2022). https://doi.org/10.1007/s13204-021-01778-8

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  • DOI: https://doi.org/10.1007/s13204-021-01778-8

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