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Enhancement of Electrical and Dielectric Properties of Graphene Oxide‐nanoparticle Based Devices

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Abstract

The aim of this work is to invent a novel technology for manufacture not only graphene oxide, but also conductive graphene oxide. This is the novelty in this technology, which is not available in any other method for preparing graphene oxide. This study describes a unique way for preparation of conductive nano-particles of graphene oxide, GO. The advantages of this technology is very simple, low cost, short time of preparation and can be manufacture a large amount of conductive GO by firing polyvinyl alcohol PVA on SiO2/pSi to preparation this assembly GO/SiO2/pSi as a Schottky barrier diode or Metal Oxide Semiconductor, MOS. Besides the pioneering in this article GO is deemed insulator, however with rising temperature through firing PVA, its conductivity remarkably enhances and the produced GO can be used as a conductor. The as-prepared sample has been characterized using different techniques (e.g. Scanning Electron Microscopy (SEM), Raman Spectroscopy, X-Ray diffraction (XRD) and Impedance Spectroscopy. Temperature, voltage and frequency dependences of M’, M’’, 1/C2, Rs, σac and tanδ of GO/SiO2//p-Si diodes were achieved in the varied ranges of voltage and frequency. I-V characteristic of GO/SiO2/pSi Schottky-diode is taken at different temperatures. The elementary factors of the diode such as barrier height (Φb), series resistance (Rs) and ideality factor (n), of GO/SiO2/pSi are also considered. The nyquist plot of M″(M′) at different voltages and temperatures were examined.

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Acknowledgements

The authors would like to express their appreciation to the members of their team at Physics Division, NRC for access, support and assistance throughout this work.

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Authors and Affiliations

  1. Solid State Electronics Laboratory, Solid State Physics Department, Physics Division, National Research Centre, Dokki, Giza, 12622, Egypt

    A. Ashery

  2. Microwave Physics and Dielectrics Department, National Research Centre, Dokki, Giza, 12622, Egypt

    M. A. Moussa & G. M. Turky

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  1. A. Ashery
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  2. M. A. Moussa
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Contributions

A. Ashery and G.M. Turky, designed the study and performed the experiments of structure analysis. A. Ashery, M.A. Moussa and G.M. Turky, performed the experiments, designed the figures and explained the electrical properties. A. Ashery and M.A. Moussa, designed the figures and analyzed spectra. A. Ashery drafted the manuscript. All authors discussed the results and commented on the manuscript.

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Correspondence to A. Ashery.

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As corresponding author, I A. Ashery, hereby confirm on behalf of all authors that: (1) This manuscript has not been published, was not, and is not being submitted to any other journal. If presented at a conference, the conference is identified. If published in conference proceedings, substantial justification for re-publication must be presented. (2) All necessary permissions for publication were secured prior to submission of the manuscript.

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Ashery, A., Moussa, M.A. & Turky, G.M. Enhancement of Electrical and Dielectric Properties of Graphene Oxide‐nanoparticle Based Devices. Silicon 14, 1913–1924 (2022). https://doi.org/10.1007/s12633-021-00943-6

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