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On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage

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Abstract

In order to interpret the electrical characteristics of fabricated Au/ZnO/n-Si structures as a function of frequency and voltage well, their capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements were carried out in a wide range of frequencies (0.7 kHz–2 MHz) and voltages (± 6 V) by 50 mV steps at room temperature. Both the C–V and G/ω–V plots have reverse, depletion, and accumulation regions such as a metal–insulator/oxide semiconductor (MIS or MOS) structures. The values of doped-donor atoms (N D), Fermi energy level (E F), barrier height (ΦB), and series resistance (R s) of the structure were obtained as a function of frequency and voltage. While the value of N D decreases with increasing frequency almost as exponentially, the value of depletion width (W D) increases. The values of C and G/ω increase with decreasing frequency because the surface states (N ss) are able to follow the alternating current (AC) signal, resulting in excess capacitance (C ex) and conductance (G ex/ω), which depends on their relaxation time and the frequency of the AC signal. The voltage-dependent profiles of N ss were obtained from both the high–low frequency capacitance and Hill-Colleman methods. The other important parameter R s of the structure was also obtained from the Nicollian and Brews methods as a function of voltage.

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Acknowledgement

ARTEMIZ Research and Development (R&D) Company supported this work. ARTEMIZ is an establishment, which is financially supported by Small and Medium Enterprises Development Organization (KOSGEB), Republic of Turkey.

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Authors and Affiliations

  1. Department of Environmental Engineering, Institute of Science, Hacettepe University, 06800, Ankara, Turkey

    Afsoun Nikravan

  2. Department of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, Turkey

    Yosef Badali & İbrahim Uslu

  3. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    Şemsettin Altındal

  4. Department of Physics, Faculty of Science, Bingöl University, 12000, Bingöl, Turkey

    İkram Orak

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  1. Afsoun Nikravan
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  2. Yosef Badali
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Correspondence to Afsoun Nikravan.

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Nikravan, A., Badali, Y., Altındal, Ş. et al. On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage. J. Electron. Mater. 46, 5728–5736 (2017). https://doi.org/10.1007/s11664-017-5613-7

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  • DOI: https://doi.org/10.1007/s11664-017-5613-7

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