Abstract
Nanoparticle-based flexible field-effect transistors (FETs) containing carbon nanotubes (CNTs) and silicon nanowires (SiNWs) have attracted tremendous attention, since their interesting device performance can be utilized for integrated nanoscale electronics. However, use of CNTs and SiNWs on polymer substrates poses serious limitations in terms of their fabrication procedure, repeatability, and biodegradability. In this article, we report for the first time the fabrication and characteristics of solution-processed FETs on a paper substrate doped with easily prepared silver nanoparticles (AgNPs). To compare the FET performance, we fabricated two other FETs on paper containing ionic liquid (IL, 1-butyl-3-methylimidazolium octyl sulfate) and reduced graphene oxide (rGO) as dopants. We observe that the AgNP-based dopant generated good FET characteristics in terms of linear transconductance variations and higher carrier concentration values, showing negligible changes after bending and aging. In comparison with the AgNP-FET, the rGO- and IL-based dopants yielded high carrier mobilities, but the rGO-based FET is more susceptible to aging and bending. The excellent linearity of the I DS–V G curve found for the AgNP-FET ensures its applicability for devices requiring linear transfer characteristics such as linear amplifiers.
Abbreviations
- PS:
-
Polystyrene
- PDMS:
-
Polydimethylsiloxane
- AgNP:
-
Silver nanoparticle
- rGO:
-
Reduced graphene oxide
- FET:
-
Field-effect transistor
- IL:
-
Ionic liquid
- EDL:
-
Electric double layer
- PVP:
-
Polyvinylpyrrolidone
- FESEM:
-
Field-emission scanning electron microscopy
- G:
-
Gate contact
- D:
-
Drain contact
- S:
-
Source contact
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Acknowledgements
This research was supported by the Department of Biotechnology, Govt. of India (Grant No. GAP101612) and the Council of Scientific and Industrial Research, Govt. of India (Grant No. ESC0112). The authors acknowledge Madan Reddy, Mohd Afroz Akhtar, Saurav Haldar, Kalyan Chatterjee, Peuli Nath, and Preeti Singh from CSIR-CMERI, Durgapur, India for their assistance in making the CAD models and preparing the chemicals.
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Electronic Supplementary Information (ESI) available: Method for synthesis of AgNPs with particle size in the range of 70 nm to 85 nm. Process to fabricate the IL-FET, AgNP-FET, and rGO-FET. FESEM image demonstrating the size of AgNPs trapped in paper substrate. Exfoliation of graphitic layers in pencil markings on paper substrate revealed through SEM image. (DOC 527 kb)
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Mandal, S., Arun, R.K., Nagahanumaiah et al. Silver Nanoparticles in Comparison with Ionic Liquid and rGO as Gate Dopant for Paper–Pencil-Based Flexible Field-Effect Transistors. J. Electron. Mater. 44, 6–12 (2015). https://doi.org/10.1007/s11664-014-3455-0
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DOI: https://doi.org/10.1007/s11664-014-3455-0