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Effect of Thickness and Annealing Temperature on Magnetic Properties of Ultrathin γ-Fe2O3 Films Grown on Silicon Substrate

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Abstract

The effect of thickness and annealing temperature on magnetic properties of ultrathin γ-Fe2O3 films with MgO buffer layer grown on silicon substrate is investigated. The saturation magnetization and coercive force of samples at room temperature increase with increasing of annealing temperature, and decrease as annealing temperature is above 873 K (600 °C). The saturation magnetization of samples decreases with increasing of the thickness of γ-Fe2O3 at room temperature. The samples with 3 to 4 nm thick γ-Fe2O3 annealed at 873 K (600 °C) show saturation magnetization of about 400 emu/cm3, which is close to the bulk value of ~390 emu/cm3 within the error range.

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Acknowledgments

This work was supported by the National Science Foundation of China (Grant No. 51372209).

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Authors and Affiliations

  1. School of Physics Science and Technology, Southwest University, Chongqing, 400715, P.R. China

    Bai Sun (Ph.D.), Wenxi Zhao (Ph.D.), Yuanqiang Xiong (Ph.D.), Yingyan Lin (Ph.D.) & Peng Chen (Professor)

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  1. Bai Sun
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  2. Wenxi Zhao
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  3. Yuanqiang Xiong
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  4. Yingyan Lin
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  5. Peng Chen
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Correspondence to Peng Chen.

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Manuscript submitted November 6, 2013.

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Sun, B., Zhao, W., Xiong, Y. et al. Effect of Thickness and Annealing Temperature on Magnetic Properties of Ultrathin γ-Fe2O3 Films Grown on Silicon Substrate. Metall Mater Trans A 45, 5245–5248 (2014). https://doi.org/10.1007/s11661-014-2436-5

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  • DOI: https://doi.org/10.1007/s11661-014-2436-5

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