Abstract
The J(ω) Raman spectra of the \(( {\text{GaN)}}_{ 1 2 9}\), \(( {\text{SiO}}_{ 2} )_{86}\), and \(( {\text{GaN)}}_{ 5 4}\) \(( {\text{SiO}}_{ 2} )_{50}\) nanoparticles as well as the optical properties of silicon dioxide and gallium arsenide nanoparticles and the four-component particles based on them were calculated using the molecular dynamics method. The spectrum of \(( {\text{SiO}}_{ 2} )_{86}\) had three broad bands only, whereas the Raman spectrum of \(( {\text{GaN)}}_{ 1 2 9}\) contained a large number of overlapping bands. The shape of Raman spectra for four-component particles depends strongly on the way the \({\text{GaN}}\)-, \({\text{GaAs}}\)-, and \({\text{SiO}}_{ 2}\)-components are located in the nanoparticle. Increasing the temperature (from 300 K upto 1500 K) of nanoparticles causes a significant rise in the intensity of the Raman spectrum. Thus, the odd J(ω)-spectrum peaks for the nanoparticle with the \({\text{SiO}}_{ 2}\)-core shift in opposite directions, but this heating does not lead to the shift of J(ω)-spectrum peaks for the \(( {\text{GaAs)}}_{ 5 4}\) \(( {\text{SiO}}_{ 2} )_{50}\) nanoparticle with \({\text{SiO}}_{ 2}\)-coating. The refractive index and absorption coefficient as well as the number of optically active electrons depend weakly on the arrangement of the conductor (\({\text{GaAs}}\)) and isolator (\({\text{SiO}}_{ 2}\)) in the nanoparticle.
Similar content being viewed by others
References
Agnello S, Buscarino G, Gelardi FM (2013) Raman and IR investigation of silica nanoparticles structure. J Non-Cryst Solids 362:20–24. doi:10.1016/j.jnoncrysol.2012.11.006
Alessi A, Agnello S, Buscarino G, Gelardi FM (2013) Structural properties of core and surface of silica nanoparticles investigated by Raman spectroscopy. J Raman Spectrosc 44:810–816. doi:10.1002/jrs.4292
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR (2004) Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Braz J Phys 34: 617–619. doi.org/10.1590/S0103-97332004000400021
Bailon-Somintac MF, Ibanez JJ, Jaculbia RB, Loberternos RA, Defensor MJ, Salvador AA, Somintac AS (2011) Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (1 1 1) substrate. J Cryst Growth 314:268–273. doi:10.1016/j.jcrysgro.2010.10.152
Bass M (ed) (2010) Handbook of optics, vol IV. McGraw-Hill, New York
Benkabou F, Certier M, Aourag H (2003) Elastic properties of zinc-blende GaN, AlN and InN from molecular dynamics Mol. Simul. 29:201–209. doi:10.1080/0892702021000049673
Berezhinsky LI, Maslov VP, Tetyorkin VV, Yukhymchuk VA (2005) Investigation of Al-ZERODUR interface by Raman and secondary ion mass-spectroscopy. Semiconductor Physics Quantum Electronics & Optoelectronics 8: 37–40. http://www.journal-spqeo.org.ua/n2_2005/v8n2-37-40.pdf. Accessed 22 Feb 2013
Berg RS, Mavalvala N, Steinberg T, Smith FW (1990) Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy. J Electron Mater 19:1323–1330. doi:10.1007/BF02673349
Bhattacharya S, Datta A, Dhara S, Chakravorty D (2011) Surface optical Raman modes in GaN nanoribbons. J Raman Spectrosc 42:429–433. doi:10.1002/jrs.2704
Billeter SR, Curioni A, Fischer D, Andreoni W (2006) Ab initio derived augmented Tersoff potential for silicon oxynitride compounds and their interfaces with silicon. Phys Rev B 73:155329. doi:10.1103/PhysRevB.73.155329
Bosma WB, Fried LE, Mukamel S (1993) Simulation of the intermolecular vibrational spectra of liquid water and water clusters. J Chem Phys 98:4413–4421. doi:10.1063/1.465001
Bouzaïene L, Sfaxi L, Baira M, Maaref H, Bru-Chevallier C (2011) Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots. J Nanopart Res 13:257–262. doi:10.1007/s11051-010-0024-1
Bruckner R (1970) Properties and structure of vitreous silica. J Non-Cryst Solids 5: 123–175. http://ru.scribd.com/doc/80794660/Properties-and-Structure-of-Vitreous-Silica-I. Accessed 22 Feb 2013
Chligui M, Guimbretiere G, Canizares A, Matzen G, Vaills Y, Simon P (2010) New features in the Raman spectrum of silica: Key-points in the improvement on structure knowledge. Phys Rev B. http://hal.archive-suvertes.fr/docs/00/52/08/23/PDF/ chliguiSiO2.pdf. Accessed 22 Feb 2013
Folk RL, Pittman JS (1971) Length-slow chalcedony: a new testament for vanished evaporates. J Sediment Petrol 41:1045–1058. doi:10.1306/D42687BB-2B26-11D7-8648000102C1865D
Galashev AY (2010) Simulation of silicon nanoparticles stabilized by hydrogen at high temperatures. J Nanopart Res 12:3003–3018. doi:10.1007/s11051-010-9892-7
Galashev AY (2011) Computer study of absorption of oxygen and ozone molecules by water clusters with Cl− and Br−. Can J Chem 89:524–533. doi:10.1139/V10-174
Galashev AY (2012) Molecular dynamics simulation of adsorption of ozone and nitrate ions by water clusters. High Temp 50:204–213. doi:10.1134/S0018151X12010051
Galashev AY, Rakhmanova OR, Novruzova OA (2011a) Molecular-dynamic modeling of the spectral characteristics of the ozone–water cluster system. High Temp 49:193–198. doi:10.1134/S0018151X11010056
Galashev AY, Rakhmanova OR, Novruzova OA (2011b) Computational study of interaction of bromine ions with clusters (O2)6(H2O)50 and (O3)6(H2O)50. High Temp 49:528–538. doi:10.1134/S0018151X11040080
Goldman RS, Briner BG, Feenstra RM, O’Steen ML, Hauenstein RJ (1996) Atomic-scale structure and electronic properties of GaN/GaAs superlattices. Appl Phys Lett 69:3698. doi:10.1063/1.117193
Hammerschmidt T, Kratzer P, Scheffler M (2008) Analytic many-body potential for InAs/GaAs surface and nanostructures: formation energy of InAs quantum dots. Phys Rev B 77:235303. doi:10.1103/PhysRevB.81.159905
Hinkle CL, Milojevic M, Brennan B, Sonnet AM, Aguirre-Tostado FS, Hughes GJ, Vogel EM, Wallace RM (2009) Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning. Appl Phys Lett 94:162101. doi:10.1063/1.3120546
Jayaraman A, Wood DL, Maines RG (1987) High-pressure Raman study of the vibrational modes in aluminum phosphate and a-quartz. Phys Rev B 35:8316–8321. doi:10.1103/PhysRevB.35.8316
Jiang D-S, Ramsteiner M, Ploog K-H, Tews H, Graber A, Averbeck R, Riechert H (1998) Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate. Appl Phys Lett 72:365–368. doi:10.1063/1.120738
Kaczmarczyk G, Kaschner A, Hoffmann A, Thomsen C (2000) Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN. Phys Rev B 61:5353–5357. doi:10.1103/PhysRevB.61.5353
Kandalam AK, Pandey R, Blanco MA, Costales A, Recio JM, Newsam JM (2000) First principles study of polyatomic clusters of AlN, GaN, and InN. 1. Structure, stability, vibrations, and ionization. J Phys Chem B 104:4361–4367. doi:10.1021/jp994308s
Kim JS, Kim EK, Song JD, Choi WJ, Lee JI (2006) Study on the energy-band structure of an InAs/InGaAs/GaAs Quantum-dot infrared photodetector structure. J Korean Phys Soc 49:2124–2127. doi:10.3938/jkps.49.2132
Kingma KJ, Hemley RJ (1994) Raman spectroscopic study of microcrystalline silica. Am Mineral 79:269–273
Kitamura R, Pilon L, Jonasz M (2007) Optical constants of silica glass from extreme ultraviolet to far infrared at near room temperature. Appl Optics 46:8118–8133. doi:10.1364/AO.46.008118
Klein C, Hurlbut CS Jr (1985) Manual of Mineralogy, 20th edn. Wiley, New York
Konenkova EV, Zhilyaev YuV, Fedirko VA, Zahn DRT (2003) Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon. Appl Phys Lett 83:629–631. doi:10.1063/1.1592623
Kozawa T, Kachi T, Kano H, Taga Y, Hashimoto M, Koide N, Manabe K (1994) Raman scattering from LO phonon-plasmon coupled modes in gallium nitride. J Appl Phys 75:1098–1101. doi:10.1063/1.356492
Landau LD, Lifshitz EM (1984) Electrodynamics of continuous media. Course of theoretical physics, vol 8. Butterworth–Heinemann, Oxford
LaBella VP, Krause MR, Ding Z, Thibado PM (2005) Arsenic-rich GaAs(0 0 1) surface structure. Surf Sci Rep 60:1–53. doi:10.1016/j.surfrep.2005.10.001
Le Bail A (2005) Inorganic structure prediction with GRINSP. J Appl Crystallogr 38:389–395. doi:10.1107/S0021889805002384
Lide DR (ed) (1996) CRC Handbook of chemistry and physics, 77th edn. CRC Press, Boca Raton-Florida
Lou L, Norland P, Smalley RE (1992) Electronic structure of small GaAs clusters. J Chem Phys 97: 1858–1864. doi.org/10.1063/1.463174
Lu G-H, Wang Q, Liu F (2007) First-principles calculation of interaction between interstitial O and As dopant in heavily As-doped Si. J Appl Phys 101:026104. doi:10.1063/1.2423231
Malitson IH (1965) Interspecimen comparison of the refractive index of fused silica. J Opt Soc Am 55:1205–1208. doi:10.1364/JOSA.55.001205
McIntosh C, Toulouse J, Tick P (1997) The Boson peak in alkali silicate glasses. J Non-Cryst Solids 222:335–341. doi:10.1016/S0022-3093(97)90133-2
McMillan PF, Hess AC (1990) Ab initio valence force field calculations for quartz. Phys Chem Miner 17:97–107. doi:10.1007/BF00199660
Metin CO, Lake LW, Miranda CR, Nguyen OP (2011) Stability of aqueous silica nanoparticle dispersions. J Nanopart Res 13:839–850. doi:10.1007/s11051-010-0085-1
Mooradian A, Wright GB (1966) First order Raman effect in III–V compounds. Solid State Commun 4: 431–434. http://dx.doi.org/10.1016/0038-1098(66)90321-8
Munetoh S, Motooka T, Moriguchi K, Shintani A (2007) Interatomic potential for Si–O systems using Tersoff parameterization. Comput Mater Sci 39:334–339. doi:10.1016/j.commatsci.2006.06.010
Nayak J, Mythili R, Vijayalakshmi M, Sahu SN (2004) Size quantization effect in GaAs nanocrystals. Physica E 24: 227–233. http://dx.doi.org/10.1016/j.physe.2004.04.035
Nishidate Y, Nikishkov GP (2008) Atomic-scale modeling of self-positioning nanostructures. Comput Model Eng Sci 26:91–106. doi:10.3970/cmes.2008.026.091
Nordlund K, Peltola J, Nord J, Keinonen J, Averback RS (2000) Defect clustering during ion irradiation of GaAs: insight from molecular dynamics simulations. J Appl Phys 90:1710–1717. doi:10.3970/cmes.2008.026.91
Ocafia M, Fornes V, Garcia-Ramos JV, Serna CJ (1987) Polarization effects in the infrared spectra of α-quartz and α-cristobalite. Phys Chem Miner 14:527–532. doi:10.1007/BF00308288
Okuyama K, Lenggoro IW (2003) Preparation of nanoparticles via spray route. Chem Eng Sci 58:537–547. doi:10.1016/S0009-2509(02)00578-X
Philipp HR, Ehrenreich H (1963) Optical properties of semiconductors. Phys Rev 129:1550–1560. doi:10.1103/PhysRev.129.1550
Ramsteiner M, Menniger J, Brandt O, Yang H, Ploog KH (1996) Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions. Appl Phys Lett 69:1276–1278. doi:10.1063/1.117390
Schonbachler N, Luthy W (2010) Measurements of Raman lines in silica, dimethyl_methylphosphonate and methyl salicylate. Univ Bern Press, Bern
Serrano J, Rubio A, Hernandez E, Muñoz A, Mujica A (2000) Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures. Phys Rev B 62:16612–16623. doi:10.1103/PhysRevB.62.16612
Siegle H, Loa I, Thurian P, Kaczmarczyk G, Filippidis L, Hoffmann A, Thomsen C (1997a) Defect modes and disorder induced Raman scattering in GaN. Z Phys Chem 200:187–193. doi:10.1524/zpch.1997.200.Part_1_2.187
Siegle H, Loa I, Thurian P, Eckey L, Hoffmann A, Broser I, Thomsen C (1997b) Comment on “Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions” [Appl. Phys. Lett. 69,1276 (1996)]. Appl Phys Lett 70:909. doi:10.1063/1.119072
Siegle H, Kaschner A, Hoffmann A, Broser I, Thomsen C, Einfeldt S, Hommel D (1998) Raman scattering from defects in GaN: the question of vibrational or electronic scattering mechanism. Phys Rev B 58:13619–13626. doi:10.1103/PhysRevB.58.13619
Stampfl C, van de Walle CG (1999) Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation. Phys Rev B 59:5521–5535. doi:10.1103/PhysRevB.59.5521
Stolper EM, Ahrens TJ (1987) On the nature of pressure-Induced coordination changes in silicate melts and glasses. Geophys Res Lett l4:1231–1233. doi:10.1029/GL014i012p01231
Tan G-L, Lemon MF, French RH (2003) Optical properties and London dispersion forces of amorphous silica determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry. J Am Ceram Soc 86:1885–1892. doi:10.1111/j.1151-2916.2003.tb03577.x
Tersoff J (1986) New empirical model for the structural properties of silicon. Phys Rev Lett 56:632–635. doi:10.1103/PhysRevLett.56.632
Tersoff J (1989) Modeling solid-state chemistry: interatomic potentials for multicomponent systems. Phys Rev B 39:5566–5568. doi:10.1103/PhysRevB.39.5566
Vassileva E, Furuta N (2001) Application of high-surface-area ZrO2 in preconcentration and determination of 18 elements by on-line flow injection with inductively coupled plasma atomic emission spectrometry. Fresenius J Anal Chem 370:52–59. doi:10.1007/s002160100744
Vilcarromero J, Bustamante R, Silva JHD (2006) Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique. Braz J Phys 36:1035–1037. doi:10.1590/S0103-97332006000600063
Wang R-M, Chen G-D, Lin J-Y, Jiang H-X (2006) Comparative analysis of temperature-dependent Raman spectra of GaN and GaN/Mg films. Front Phys China 1:112–116. doi:10.1007/s11467-005-0007-3
Wang W, Adali T, Emge D (2012) A novel approach for target detection and classification using canonical correlation analysis. J Signal Process Syst 68:379–390. doi:10.1007/s11265-011-0625-7
Williams Q, Jeanloz R (1988) Spectroscopic evidence for pressure-induced coordination changes in silicate glasses and melts. Science 239:902–905. doi:10.1126/science.239.4842.902
Yasukawa A (1996) Using an extended Tersoff interatomic potential to analyze the static–fatigue strength of SiO2 under atmospheric influence. Jpn Soc Mech Eng Int J 39: 313–320. http://www.jsme.or.jp/English/. Accessed 22 Feb 2013
Zheleva TS, Ashmawi WM, Nam O-H, Davis RF (1999) Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures. Appl Phys Lett 74:2492–2494. doi:10.1063/1.123017
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Galashev, A.Y. Computer study of the Raman spectra and infrared optical properties of gallium nitride and gallium arsenic nanoparticles with SiO2 core and shell. J Nanopart Res 16, 2351 (2014). https://doi.org/10.1007/s11051-014-2351-0
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11051-014-2351-0