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Effect of pH on transport characteristics of silicon carbide nanowire field-effect transistor (SiCNW-FET)

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Abstract

This paper investigates the effect of pH on transport properties of silicon carbide nanowire field-effect transistor (SiCNW-FET) including the key parameters such as transconductance, resistivity, stability, and repeatability of the device towards harsh environment-sensing applications. Transport properties were investigated under different pH solutions ranging from pH 5 to pH 9. The device exhibited a high transconductance of 4.5 mS and a very low resistivity of 0.065 mΩ cm at pH 5 at a bias voltage of 2 V. The device showed an increase in conductance (from 2.66 to 4.5 mS) after applying the solution with pH 5 and then a substantial decrease in conductance (from 4.5 to 0.15 mS) with increasing the pH from 5 to 9 was observed. The changes in conductance can be attributed to the metal oxide/electrolyte binding sites model and to the hydrogen ions adsorption on the surface of the SiC nanowires altering the total surface charge density. The device exhibited almost a full recovery after rinsing with DI water, achieving good stability and repeatability. In consequence, this study would contribute to the development of low-power and cost-effective 3C-SiCNW-based FETs for use in the fields of bio- and environmental sensing, as well as biomedical applications.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

KT gratefully thanks the Istanbul Development Agency (ISTKA) for providing support for this research (Grant No. TR10/16/YNY/0102).

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  1. Faculty of Engineering, Advanced Micro and Nano Devices Laboratory, Marmara University, Istanbul, Turkey

    Muhammad Awais, Habeeb Mousa & Kasif Teker

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  1. Muhammad Awais
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  2. Habeeb Mousa
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  3. Kasif Teker
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Correspondence to Kasif Teker.

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Awais, M., Mousa, H. & Teker, K. Effect of pH on transport characteristics of silicon carbide nanowire field-effect transistor (SiCNW-FET). J Mater Sci: Mater Electron 32, 3431–3436 (2021). https://doi.org/10.1007/s10854-020-05089-6

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