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Microstructures and electrical properties of copper oxide doped terbium oxide ceramics

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Abstract

The effects of copper oxide (CuO) on the microstructure and electric properties of nonstoichiometric compound terbium dioxide (Tb4O7) ceramics were investigated. Results included a reduction in the sintering temperature to 1,100 °C, a grain size of 4.2 μm, and a density of 96.2 %, which are larger than the values in previous investigation for Tb4O7 ceramics (grain sizes between 0.4 and 1.0 µm). Among the sintered ceramics, the sample doped with 10.0 wt% CuO showed the maximum nonlinear coefficient α = 43.5, which is obviously greater than α = 3.03 of the pure sample. Doping with 10.0 wt% CuO also exhibited nonlinearity α = 2.14 even at 1,123 K. In addition, the impedance spectra of the sample doped with 5.0 mol% CuO showed the largest grain boundary semicircle; 0 and 20 % samples showed both inductive and capacitive reactance.

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Acknowledgments

This work was supported by the Fundamental Research Funds for the Central Universities (2682013CX014).

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  1. School of Electrical Engineering, Southwest Jiaotong University, Chengdu, 610031, Sichuan, China

    Yingjie Gan, Yu Wang, Xiang Dong & Liang Dong

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  1. Yingjie Gan
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  2. Yu Wang
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  4. Liang Dong
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Correspondence to Yingjie Gan.

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Gan, Y., Wang, Y., Dong, X. et al. Microstructures and electrical properties of copper oxide doped terbium oxide ceramics. J Mater Sci: Mater Electron 25, 4115–4121 (2014). https://doi.org/10.1007/s10854-014-2137-2

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