Abstract
In this study we have synthesized and characterized FeS2 nanoparticles with larger optical band gap (3.19 eV) and high thermal stability by hydrothermal route with capping reagent PEG 400. This high quality FeS2 nanoparticle with higher band gap energy was applied as semiconducting acceptor in MEHPPV:FeS2 nanoparticle based hybrid solar cells to improve the open circuit voltage. Variations in the property of FeS2 have been done and confirmed by XRD, FE-SEM, TEM, FTIR, TGA, UV–VIS spectroscopy and Raman study. Two types of solar cells have been fabricated with structures: ITO/PEDOT:PSS/MEHPPV/Al and ITO/PEDOT:PSS/MEHPPV:FeS2/Al. The open circuit voltage has been increased from 0.64 to 0.72 V by compositing FeS2 nanoparticle within MEHPPV matrix.
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Acknowledgments
This work was supported by University Grants Commission, Govt. of India under project 39-508/2010(SR). The authors wish to acknowledge Debraj Saha of Department of Chemistry, Jadavpur University and Priyanka Das of Department of Chemistry, West Bengal State University, Barasat for their valuable suggestions and enormous technical assistance.
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Layek, A., Middya, S. & Ray, P.P. Increase in open circuit voltage by the incorporation of band gap engineered FeS2 nanoparticle within MEHPPV solar cell. J Mater Sci: Mater Electron 24, 3749–3755 (2013). https://doi.org/10.1007/s10854-013-1313-0
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DOI: https://doi.org/10.1007/s10854-013-1313-0