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Regulation of vertical and biaxial strain on electronic and optical properties of G-GaN-G sandwich heterostructure

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Abstract

Recently, the two-dimensional heterostructure is a research hot spot of semiconductor materials, and it has wide application prospects in electronic devices and photocatalysis. In this work, we constructed novel graphene-GaN-graphene (G-GaN-G) sandwich heterostructure, and the electronic and optical properties have been theoretically investigated based on the first principles calculations. The computation results indicate that the heterostructure is most stable when interlayer distance d0 is 3.189 Å, and electronic and optical properties of intrinsic GaN and graphene are well preserved. In addition, the effect of vertical and biaxial strain on the G-GaN-G heterostructure is also investigated, we find that strain can effectively regulate the electronic and optical properties. Therefore, the electronic and optical properties of G-GaN-G can be tuned by applying different levels of strain to meet the needs of devices. This study results reveal that the G-GaN-G sandwich heterostructure can be hopefully applied to ultraviolet photodetectors and optoelectronic devices.

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Acknowledgements

This work was partially supported by the National Natural Science Foundation of China (51042010, 11904285), the Industrial Key Project Foundation of Shaanxi Province, China (No. 2019GY-208), and Industrial Key Project Foundation of Xi’an, China (No. 2019217814GXRC014CG015-GXYD 14.2).

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Authors and Affiliations

  1. School of Science, Xi’an University of Technology, Xi’an, 710048, China

    Chang Liu, Enling Li, Yanpeng Zheng, Kaifei Bai, Zhen Cui & Deming Ma

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  1. Chang Liu
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  2. Enling Li
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  3. Yanpeng Zheng
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Correspondence to Enling Li.

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Liu, C., Li, E., Zheng, Y. et al. Regulation of vertical and biaxial strain on electronic and optical properties of G-GaN-G sandwich heterostructure. J Mater Sci 56, 11402–11413 (2021). https://doi.org/10.1007/s10853-021-05998-9

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