Abstract
Cu-doped ZnO (ZnO:Cu) thin films and ZnO/ZnO:Cu homojunction devices were electrodeposited on conductive glass substrates in a non-aqueous electrolyte containing Cu and Zn salts. The Cu content of the films is proportional to the Cu/Zn precursor ratio in the deposition electrolyte. ZnO:Cu was found to be of a hexagonal wurtzite structure with (002) preferred orientation. A transition from n-type to p-type was observed for ZnO:Cu films with a Cu/Zn ratio higher than 2% as inferred from the change in the direction of the photocurrent. The rectifying characteristics shown by homojunction devices further confirm the p-type conductivity of ZnO:Cu layers.
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Acknowledgements
This work was supported by the Spanish Government through MEC grant MAT2009-14625-C03-03 and the Portuguese Foundation for Science and Technology (FCT), CIENCIA 2007. Financial support by the European Commission through NanoCIS project (PIRSESGA-2010-269279) is gratefully acknowledged.
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Marí, B., Sahal, M., Mollar, M.A. et al. p-Type behaviour of electrodeposited ZnO:Cu films. J Solid State Electrochem 16, 2261–2265 (2012). https://doi.org/10.1007/s10008-011-1635-x
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DOI: https://doi.org/10.1007/s10008-011-1635-x