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Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs

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Chemical Research in Chinese Universities Aims and scope

Abstract

Two-dimensional(2D) materials with a high density and low power consumption have become the most popular candidates for next-generation semiconductor electronic devices. As a prototype 2D material, graphene has attracted much attention owing to its stability and ultrahigh mobility. However, zero band gap of graphene leads to very low on-off ratios and thus limits its applications in electronic devices, such as transistors. Although some new 2D materials and doped graphene have nonzero band gaps, the electronic mobility is sacrificed. In this study, to open the band gap of graphene with high electronic mobility, the structure and property of BN-doped graphene were evaluated using first-principles calculations. The formation energies indicate that the six-membered BN rings doped graphene has the most favorable configuration. The band structures show that the band gaps can be opened by such type of doping. Also, the Dirac-cone-like band dispersion of graphene is mostly inhibited, ensuring high electronic mobility. Therefore, codoping BN into graphene might provide 2D materials with nonzero band gaps and high electronic mobility.

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Authors and Affiliations

  1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China

    Xiangyang Ren, Sha Xia, Aiwu Li & Han Yang

  2. Shenyang Acadamy of Instrumentation Science Co., Ltd., Shenyang, 110043, P. R. China

    Xiangyang Ren & Zhiguo Zhang

  3. College of Physics, Jilin University, Changchun, 130012, P. R. China

    Xing Meng

  4. College of Computer Science and Technology, Jilin University, Changchun, 130012, P. R. China

    Hongmei Yu & Qi Wu

  5. Systems Engineering Research Institute, Beijing, 100036, P. R. China

    Wenyi Zhang

Authors
  1. Xiangyang Ren
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  2. Sha Xia
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  3. Zhiguo Zhang
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  4. Xing Meng
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  5. Hongmei Yu
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  6. Qi Wu
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  7. Wenyi Zhang
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  8. Aiwu Li
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  9. Han Yang
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Corresponding authors

Correspondence to Aiwu Li or Han Yang.

Additional information

Supported by the National Key Research and Development Program of China(No.2017YFB1104300), the National Natural Science Foundation of China(No.11874171) and the Fund of the High-performance Computing Center(HPCC) of Jilin University, China.

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Ren, X., Xia, S., Zhang, Z. et al. Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs. Chem. Res. Chin. Univ. 35, 1058–1061 (2019). https://doi.org/10.1007/s40242-019-9151-0

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  • DOI: https://doi.org/10.1007/s40242-019-9151-0

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