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Electronic properties of organic monolayers and molecular devices

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Abstract

We review some of our recent experimental results on charge transport in organic nanostructures such as self-assembled monolayer and monolayers of organic semiconductors. We describe a molecular rectifying junction made from a sequential self-assembly on silicon. These devices exhibit a marked current-voltage rectification behavior due to resonant transport between the Si conduction band and the π molecule highest occupied molecular orbital of the π molecule. We discuss the role of metal Fermi level pinning in the current-voltage behavior of these molecular junctions. We also discuss some recent insights on the inelastic electron tunneling behavior of Si/alkyl chain/metal junctions.

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Authors and Affiliations

  1. Institut d’Electronique, de Micro-electronique et de Nanotechnologie, CNRS, Molecular Nanostructures and Devices Group, Avenue Poincaré, BP69, 59652, Villeneuve d’Ascq Cedex, France

    D Vuillaume, S Lenfant, D Guerin & C Delerue

  2. Centre de Recherche en Sciences et Technologies de l’Information et de la Communication, Université de Reims, BP 1039, 51687, Reims Cedex 2, France

    C Petit

  3. Laboratoire de Microscopies et d’Etudes de Nanostructures, Université de Reims, BP 1039, 51687, Reims Cedex 2, France

    G Salace

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  1. D Vuillaume
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Vuillaume, D., Lenfant, S., Guerin, D. et al. Electronic properties of organic monolayers and molecular devices. Pramana - J Phys 67, 17–32 (2006). https://doi.org/10.1007/s12043-006-0033-x

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