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Antibunching and blinking from a single colloidal CdSe quantum dot

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Abstract

We have investigated the optical properties of single CdSe/ZnS nanocrystals by conducting combinations of experiments on antibunching and photoluminescence intermittence under different experimental conditions. Based on photoluminescence in an antibunching experiment, we analyzed the emission lifetime of QDs by using stretched exponentials. The difference between the parameters obtained from average lifetimes and stretched exponents were analyzed by considering the effect of nonradiative emission. An Auger-assisted tunneling model was used to explain the power law exponents of off time distribution. The power law exponent under high excitation power was correlated with a higher Auger ionization rate. Using the parameters obtained from stretched exponential function and power law, the antibunching phenomena at different time and under different excitation intensity were analyzed.

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Authors and Affiliations

  1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    XingSheng Xu & Shuai Chen

  2. Kobe Advanced Research Center, National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-Ku, Kobe, 651-2492, Japan

    Toshiki Yamada

Authors
  1. XingSheng Xu
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  2. Shuai Chen
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  3. Toshiki Yamada
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Correspondence to XingSheng Xu.

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Xu, X., Chen, S. & Yamada, T. Antibunching and blinking from a single colloidal CdSe quantum dot. Sci. China Phys. Mech. Astron. 53, 1619–1625 (2010). https://doi.org/10.1007/s11433-010-4091-1

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  • DOI: https://doi.org/10.1007/s11433-010-4091-1

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